With the significant reduction in package parasitics provided by the eGaN FET, the package inductance is minimized and is no longer the major parasitic loss contributor. The high frequency loop ...
An improved probing method aims to eliminate uncertainties for loop inductance measurements. This paper looks at the properties and effects on the measurement of two different via structures in a ...
The previous columns in this series discussed the benefits of eGaN® FETs and their potential to achieve higher efficiencies and higher switching speeds than possible with silicon MOSFETs. This ...
Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While the wide-bandgap material can certainly improve a system’s overall ...
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